Gallium Phosphide(GaP) has an energy band gap (EG) that can emit visible light, but it is an indirect gap semiconductor. It is combined with GaAs to produce GaAs1-xPx alloy which is both direct and has a light producing energy band gap (EG) for a 0.28 ≤ x ≤ 0.45 GaP is also used in manufacturing light-emitting diodes (LEDs). It can emit green light.
     InP wafers are attracting much attention as a key component in optical fiber communications equipment. Specifically, the semi-insulating InP mirror wafer is expected to become the mainstream material for photodiodes used in a high-speed communications system with a transmission speed of 40 Gbps or higher. Demand for InP is also expected to grow for use in the next-generation mobile phones, which require communications with higher speed and larger capacity.

Gallium Arsenide (GaAs)
Gallium Arsenide has specialist applications in far IR optics and lens systems
Gallium Arsenide is produced by Czochralski or horizontal Bridgeman crystal growth techniques. As it is arsenic bearing, precautions in handling and working should be observed.

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